一种温度传感器及其制备方法

Temperature sensor and preparation method thereof

Abstract

The invention discloses a temperature sensor. The temperature sensor comprises a double-gate thin film transistor and a temperature sensing capacitor, and a sensing device, the current of which is changed along with changing of a temperature, is formed. The temperature sensing capacitor and the top gate electrode of the double-gate thin film transistor are integrated together, and the sensing device, the current of which is changed along with the changing of the temperature, is formed. The sensing device comprises an upper electrode plate, a capacitive dielectric layer, a lower electrode plate used as the top gate electrode, the top gate insulation layer of the transistor, a semiconductor layer, the bottom gate insulation layer of the transistor, and a substrate, which are, from top to bottom, sequentially arranged. A source electrode and a drain electrode are disposed in the top gate insulation layer. A bottom gate electrode is disposed in the bottom gate insulation layer. The temperature sensor has advantages of high sensitivity and simple circuit.
本发明公开了一种温度传感器,包括双栅薄膜晶体管和温度传感电容,并且形成因温度变化引起电流改变的传感器件。所述温度传感电容与双栅薄膜晶体管的顶栅电极集成,并且形成因温度变化引起电流变化的传感器件。所述传感器件包括自上而下依次分布的上极板、电容介质层、充当顶栅电极的下极板、晶体管的顶栅绝缘层、半导体层、晶体管的底栅绝缘层、基板;所述的顶栅绝缘层内设有源极和漏极;所述底栅绝缘层内设有底栅电极。采用本发明所述的温度传感器,具有高灵敏度和电路简单的特点。

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